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| IL211AT/ 212AT/ 213AT Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package Features * Isolation Voltage, 3000 VRMS * Industry Standard SOIC-8A Surface Mountable Package * Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC i179002 A1 K2 NC 3 NC 4 8 7 6 5 NC B C E e3 Pb Pb-free Agency Approvals * UL1577, File No. E52744 System Code Y * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A choice of 20, 50, and 100 % minimum CTR at IF = 10 mA makes these optocouplers suitable for a variety of different applications. Description The IL211AT/ IL212AT/ IL213AT are optically coupled pairs with a Gallium Arsenide infrared LED and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL211AT/ IL212AT/ IL213AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. Order Information Part IL211AT IL212AT IL213AT Remarks CTR > 20 %, SOIC-8 CTR > 50 %, SOIC-8 CTR > 100 %, SOIC-8 Available only on Tape and Reel Option (Conforms to EIA Standard RS481A) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Peak reverse voltage Forward continuous current Power dissipation Derate linearly from 25 Test condition Symbol VR IF Pdiss Value 6.0 60 90 1.2 Unit V mA mW mW/C Document Number 83615 Rev. 1.5, 26-Oct-04 www.vishay.com 1 IL211AT/ 212AT/ 213AT Vishay Semiconductors Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage ICMAX DC ICMAX Power dissipation Derate linearly from 25 C t < 1.0 ms Test condition Symbol BVCEO BVECO VCEO ICMAX DC ICMAX Pdiss Value 30 7.0 70 50 100 150 2.0 Unit V V V mA mA mW mW/C Coupler Parameter Total package dissipation Derate linearly from 25 C Storage temperature Operating temperature Soldering time at 260 C Tstg Tamb Test condition (LED + Detector) Symbol Ptot Value 240 3.2 - 55 to +150 - 55 to +100 10 Unit mW mW/C C C sec. Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Test condition IF = 10 mA VR = 6.0 V VR = 0 Symbol VF IR CO Min Typ. 1.3 0.1 13 Max 1.5 100 Unit V A pF Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector dark current Collector-emitter capacitance Test condition IC = 10 A IE = 10 A VCE = 10 V VCE = 0 Symbol BVCEO BVECO ICEO CCE Min 30 7.0 5.0 10 50 Typ. Max Unit V V nA pF Coupler Parameter Saturation voltage, collector-emitter Isolation test voltage Capacitance (input-output) Resistance input to output Collector-emitter breakdown voltage IC = 10 A Test condition IF = 10 mA 1 sec. Symbol VCEsat VISO CIO RIO BVCEO 30 3000 0.5 100 50 Min Typ. Max 0.4 Unit V VRMS pF G V www.vishay.com 2 Document Number 83615 Rev. 1.5, 26-Oct-04 IL211AT/ 212AT/ 213AT Vishay Semiconductors Current Transfer Ratio Parameter Current Transfer Ratio Test condition IF = 10 mA, VCE = 5.0 V Part IL211AT IL212AT IL213AT Symbol CTR CTR CTR Min 20 50 100 Typ. 50 80 130 Max Unit % % % Switching Characteristics Parameter Switching time Test condition IC = 2 mA, RL = 100 , VCC = 10 V Symbol ton, toff Min Typ. 3.0 Max Unit s Typical Characteristics (Tamb = 25 C unless otherwise specified) ICE- Collector-emitter Current - mA 1.4 VF - Forward Voltage - V 150 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 TA = 25C i VCE= 10 V Ta = -55C Ta = 25C 100 Ta = 100C 50 VCE= 0.4 V 0.1 1 10 IF - Forward Current - mA 100 iil211at_03 iil211at_01 1 10 IF - LED Current - mA 100 Figure 1. Forward Voltage vs. Forward Current Figure 3. Collector-Emitter Current vs.LED Current NCTRCE - Normalized - CTRCE 1.5 1.0 VCE= 5 V NICB - Normalized I CB Normalized to: VCE =10 V IF =10 mA TA =25C 100 Normalized to: VCB = 9.3 V IF =1 mA TA = 25C i 10 0.5 1 VCE= 0.4 V 0.0 .1 10 1 IF - LED Current - mA 100 iil211at_04 .1 .1 iil211at_02 1 10 IF - LED Current - mA 100 Figure 2. Normalized Non-saturated and Saturated CTRCE vs. LED Current Figure 4. Normalized Collector-Base Photocurrent vs. LED Current Document Number 83615 Rev. 1.5, 26-Oct-04 www.vishay.com 3 IL211AT/ 212AT/ 213AT Vishay Semiconductors 10 NICB - Normalized ICB NHFE(sat) - Normalized Saturated HFE Normalized to: VCB = 9.3 V IF =10 mA TA = 25C 2.0 70C 50C 25C Normalized to: Ib = 20 A Vce = 10 V Ta = 25C 1.5 1 1.0 Vce = 0.4 V 0.5 .1 .01 .1 iil211at_05 1 10 IF - LED Current - mA 100 iil211at_08 0.0 1 10 100 1000 Ib - Base Current - A Figure 5. Normalized Collector-Base Photocurrent vs. LED Current Figure 8. Normalized Saturated HFE vs. Base Current and Temperature ICB- Collector-base Current - A 1000 TA = 25C VCB = 9.3 V Switching time (s) 100 50 Input: IF =10 mA Pulse width = 100 mS Duty cycle = 50% 100 TOF F 10 10 5 TON 1 .1 .1 iil211at_06 1 10 IF - LED Current - mA 100 1.0 10K iil211at_09 50K 100K 500K 1M Base-emitter resistance, RBE () Figure 6. Collector-Base Photocurrent vs. LED Current Figure 9. Typical Switching Characteristics vs. Base Resistance (Saturated Operation) 10 5 ICEO - Collector-emitter - nA 1000 500 Switching time (S) 10 4 10 3 10 2 101 10 0 10 -1 10-2 -20 0 20 40 60 80 100 VCE = 10 V Typical Input: IF =10 mA Pulse width = 100 mS Duty cycle = 50% TO FF 100 50 10 5 TON 1 0.1 iil211at_10 0.5 1 5 10 50 100 iil211at_07 TA - Ambient Temperature - C Load resistance RL (K) Figure 7. Collector-Emitter Leakage Current vs.Temp. Figure 10. Typical Switching Times vs. Load Resistance www.vishay.com 4 Document Number 83615 Rev. 1.5, 26-Oct-04 IL211AT/ 212AT/ 213AT Vishay Semiconductors INPUT 0 VCC=5 V Input tpdon RL V OUT OUTPUT 0 10% 50% 90% td tr ton tpdoff ts tr 10% 50% 90% toff iil211at_11 Figure 11. Switching Test Circuit Package Dimensions in Inches (mm) .120 .005 (3.05 .13) .240 (6.10) R .010 (.13) .154 .005 C L(3.91 .13) .050 (1.27) .014 (.36) .036 (.91) .016 (.41) .192 .005 (4.88 .13) .015 .002 (.38 .05) .008 (.20) 5 max. .050 (1.27) typ. .021 (.53) .020 .004 (.51 .10) 2 plcs. R.010 (.25) max. .170 (4.32) .260 (6.6) .045 (1.14) 7 .058 .005 (1.49 .13) .125 .005 (3.18 .13) Lead Coplanarity .0015 (.04) max. Pin One ID 40 .004 (.10) .008 (.20) ISO Method A i178003 Document Number 83615 Rev. 1.5, 26-Oct-04 www.vishay.com 5 IL211AT/ 212AT/ 213AT Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83615 Rev. 1.5, 26-Oct-04 |
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